jiangsu changjiang elec tronics technology co., ltd dfnwb2x2-6l-a plastic-encapsulate mosfets CJMPD08 p-channel power mosfet general description the CJMPD08 uses advance d trenc h technology and design to provide excellent r ds(on) with low gate charge. this de vice is suitable for use in dc-dc conversion applications. feature z low profile for easy fit in thin environments z bidirectional current folw wi th common source configuration applications z optimized for battery and load management applications in portable equipment z li-ion battery charging and protection circuits z high power management in portable , battery powered products z high side load switch marking: fron t back maximum ratings (t a =25 unless otherwise not ed) v (br)dss r ds(on) max i d - 12 v 6 0 m @ - 4.5 v ? - 3.6 a 8 0 m - 2.5 v ? @ dfnwb2*2- 6l-a equivalent circuit www.cj-elec.com 1 f , june ,201 6 paramete r symbol value unit drain-sourc e voltag e v ds - 1 2 gate-source vo ltag e v gs 8 v continuo us dr ain current i d - a pow e r dissipation p d 0.7 w thermal resist ance from jun ction to ambient r ja 178 /w storage te mperature t j 150 junction t emperature t stg -55 ~+ 150
www.cj-elec.com 2 f , j une ,201 6 mosfet electrical characteristics para meter symbol test condition min typ max unit on/off characteristics drain-s ource breakdown voltage v (b r)dss v gs = 0v, i d = -250a - 1 2 gate-thresho ld voltage v gs( th) v ds =v gs , i d = -250a -0.4 -1 v gate-bod y leakage current i gss v ds =0 v, v gs =8v 10 0 na z ero gate voltage drain current i ds s v ds = -1 2 v, v gs =0 v -1 a f orward transconductance (note 1) g fs v ds = -10v, i d =-2.7a 5.5 s ch arges , capacitances and gate resistance input cap acitance (note 2) c iss 480 output capac itance (note 2) c oss 46 revers e transfer capacitance (note 2) c rss v ds = -15v,v gs =0 v,f =1mhz 10 pf t otal gate charge q g 7.2 gate-source c harge q gs 2.2 gate-drain charge q gd v ds = -4.5v,v gs =-6v,i d =-2.8a 1.2 nc s witching times (note2) t urn-on delay time t d ( on) 38 rise time t r 25 t urn-off delay time t d( off) 43 fall time t f v ds =-6 v, i d = -2.8a, v gs = -4.5v,r g =6 ? 5 ns source- drain diode characteristics f orward on voltage (note1) v sd v gs =0 v, i s =-1 a -0.8 v no tes: 1. pulse test : pulse width 300s, duty cycle 2 %. 2. these parameters have no way to verify. a t =25 unless otherwise specified v gs = -4.5v, i d = -3.6a 60 v gs = -2.5v, i d =-3 a 80 v gs = -1.8v, i d =-2 a 110 drain-source on-state resistance (note 1) r ds (on) v gs = -1.5v, id =-1a 170 m ?
0123 0 1 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2 0.1 1 -0 -1 -2 -3 -4 -0 -1 -2 -3 -4 -5 012345 0 20 40 60 80 100 02468 0 100 200 300 400 500 ta=25 o c pulsed transfer characteris tics drain current i d (a) gate to source voltage v gs (v) ta=25 o c pulsed 5 v sd i s source current i s (a) source to drain voltage v sd (v) v gs =-2.4v,-2.2v,-2v,-1.8v,-1.6v v gs =-1.4v v gs =-1.2v v gs =-1.0v output charact eristics drain current i d (a) drain to source voltage v ds (v) ta=25 o c pulsed v gs =-1.8v v gs =-2.5v v gs =-4.5v on-resistance r ds(on) (m ) drain current i d (a) i d r ds(on) ta=25 o c pulsed i d =-2.1a v gs r ds(on) on-resistance r ds(on) (m ) gate to source voltage v gs (v) www.cj-elec.com 3 f , j une ,201 6 7 \ s l f d o & k d u d f w h u l v w l f v
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